Job Title:  Post Doctoral Researcher in III-V Growth, 2D Materials, and Tunnel Transistors 
Job Number:  4010075 
Date Posted:  10/10/2011 
Application Deadline: Open Until Filled 

Job Description

The Department of Electrical Engineering at the University of Notre Dame is seeking to hire a post doctoral researcher. Particular attention will be given to applicants with experience in molecular beam epitaxy, graphene growth and devices, and/or III-V devices.

The researcher will support the development of tunnel field-effect transistors (TFETs) in the Midwest Institute for Nanoelectronics Discovery (MIND), which is part of the Semiconductor Research Corporation’s Nanoelectronics Research Initiative. Based at Notre Dame, MIND researchers are working to discover technologies to succeed CMOS. For more information, see http://www.src.org/ and http://mind.nd.edu.

Research will be conducted in the Notre Dame Nanofabrication Facility – the University’s new 9,000-sq.-ft. cleanroom – and associated test labs. The postdoc will be expected to take a leadership role in the research, mentor graduate students, and publish extensively. Cleanroom experience is desired (lithography, plasma etch, deposition, etc.).

This is a one-year appointment.

Qualified applicants should submit ALL of the following:
- single-page statement outlining your qualifications and their relevance to this research area
- curriculum vitae including a publications list
- pdf files of three publications
- names and contact information for three references

Please submit materials by e-mail to: deethardt.1@nd.edu
 
 
 
 
Contact: 
Midwest Institute for Nanoelectronics Discovery (MIND)
University of Notre Dame
Notre Dame, IN
United States
Email: deethardt.1nd.edu